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RMQC4A1818DGBA中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

RMQC4A1818DGBA
廠商型號(hào)

RMQC4A1818DGBA

功能描述

18-Mbit DDR? II SRAM 2-word Burst

文件大小

855.35 Kbytes

頁(yè)面數(shù)量

30 頁(yè)

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡(jiǎn)稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-1 16:20:00

RMQC4A1818DGBA規(guī)格書詳情

Description

The RMQC4A1836DGBA is a 524,288-word by 36-bit and the RMQC4A1818DGBA is a 1,048,576-word by 18-bit

synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are

controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are

suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit

configuration. These products are packaged in 165-pin plastic FBGA package.

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reso
420
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RENESAS/瑞薩
24+
BGA
8120
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TOS
24+
SOT-123
9000
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DBLECTRO
23+
原廠原包
29960
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RENESAS
1923+
NA
6900
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RENESAS/瑞薩
21+
BGA
1574
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RENESAS/瑞薩
2318+
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6800
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BGA
145
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6540
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