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SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30μVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦股份圣邦微電子(北京)股份有限公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AM

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AN

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014M

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SM2014NSKP

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SM2014NSKPC-TRG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

晶體管資料

  • 型號(hào):

    RN2014

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+R

  • 性質(zhì):

    開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    DTB123ES,RN2222,UN4121,2SA1529,

  • 最大耗散功率:

    0.4W

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-20

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.4

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TO-92L
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9852
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NA
50000
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NA/
40000
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NA
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SSM
24+
SIP
43
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SSM
23+
SIP
89630
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NTK
24+
BGA
10000
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Schaffner
2022+
1
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更多RN2014供應(yīng)商 更新時(shí)間2025-4-23 17:06:00