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RN2911

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching,InverterCircuit,InterfaceCircuitandDriverCircuit ●AEC-Q101Qualified(Note1) ●IncludingtwodevicesinUS6(ultrasuperminitypewith6leads) ●Withbuilt-inbiasresistors. ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocessandminiaturize

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RN2911AFS

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications ?Twodevicesareincorporatedintoafine-pitch,small-mold(6-pin) package. ?Incorporatingabiasresistorintoatransistorreducesthepartscount. Reducingthepartscountenablesthemanufactureofeve

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RN2911FE

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications ?TwodevicesareincorporatedintoanExtreme-Super-Mini(6-pin) package. ?Incorporatingabiasresistorintoatransistorreducespartscount. ?Reducingthepartscountenablesthemanufactureofevermore

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RN2911FS

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications ?Twodevicesareincorporatedintoafinepitchsmallmold(6-pin) package. ?Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablesthemanufactureofevermor

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2911

MicrominiatureReedRelays

MICROMINIATUREREEDRELAYS IdeallysuitedtotheneedsofAutomatedTestEquipmentandRFrequirements.Thespecificationtablesallowyoutoselecttheappropriaterelayforyourparticularapplication.Slightlylargerthanthe2200Series;theserelaysprovidemaximumversatilitywithoptionss

RHOPOINT

Rhopoint Instruments

AM2911A

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911A/BRA

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911ADC

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911ADCB

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911ADM

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911ADMB

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911APC

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911APCB

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911APM

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911APMB

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911AXC

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911AXCB

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911AXM

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AM2911AXMB

MICROPROGRAMSEQUENCERBLOCKDIAGRAM

GENERALDESCRIPTION TheAm2909Aisa4-bitwidesequencerintendedforsequencingthroughaseriesofmicroinstructionscontainedinmemory.TwoAm2909Asmaybeinterconnectedtogeneratean8-bitaddress(256words),andthreemaybeusedtogeneratea12-bitaddress(4Kwords).

AMDAdvanced Micro Devices

超威半導體美國超威半導體公司

AMS2911

1ALOWDROPOUTVOLTAGEREGULATOR

ADMOS

Advanced Monolithic Systems

晶體管資料

  • 型號:

    RN2911

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+R

  • 性質(zhì):

    表面帖裝型 (SMD)_差分放大器射極輸出 (Dual)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    6

  • 可代換的型號:

  • 最大耗散功率:

    0.4W

  • 放大倍數(shù):

  • 圖片代號:

    H-23

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.4

詳細參數(shù)

  • 型號:

    RN2911

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    TOSHIBA Transistor Silicon PNP Epitaxial Type(PCT Process)

供應商型號品牌批號封裝庫存備注價格
TOSHIBA
24+
SOT-363SOT-323-6
14700
新進庫存/原裝
詢價
SOT-363
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
TOS
1844+
NA
9852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
TOSHIBA
23+
SOT-363
63000
原裝正品現(xiàn)貨
詢價
TOSHIBA
2023+
SOT-363
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
TOSHIBA
1923+
SOT-363
35689
絕對進口原裝現(xiàn)貨庫存特價銷售
詢價
TOSHIBA/東芝
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
TOSHIBA/東芝
2022
SOT-363
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
TOSHIBA/東芝
22+
NA
10500
只有原裝 低價 實單必成
詢價
TOSHIBA東芝
24+23+
SOT-363
12580
16年現(xiàn)貨庫存供應商終端BOM表可配單提供樣品
詢價
更多RN2911供應商 更新時間2024-10-24 10:02:00