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SFT1458-H

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SFT1458-TL-H

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

TA1458A

SAWFilter954.5MHz

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TA1458A

SAWFilter954.50MHz

GOLLEDGE

Golledge Electronics Ltd

TZ1458A

SMD2.5x2.026.0MHzCrystalUnit

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TZ1458C

CrystalUnitSMD2.5x2.026.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

UPA1458

NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE

DESCRIPTION TheμPA1458isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorberand4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlin

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA1458

SILICONTRANSISTORARRAY

NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA1458H

SILICONTRANSISTORARRAY

NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA1458H

NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE

DESCRIPTION TheμPA1458isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorberand4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES ?SurgeAbsorber(C-B)builtin. ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlin

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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RUNIC潤石
24+
SOT23-5
35500
潤石原廠渠道支持實(shí)單
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RUNIC(潤石)
2025+
SOT-23-6
30365
詢價(jià)
RSG
23+
SIPDIP
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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更多RS1458供應(yīng)商 更新時(shí)間2025-4-26 11:00:00

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