| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AdvancedPowerMOSFET FEATURES νAvalancheRuggedTechnology νRuggedGateOxideTechnology νLowerInputCapacitance νImprovedGateCharge νExtendedSafeOperatingArea νLowerLeakageCurrent:10μA(Max.)@VDS=-250V νLowerRDS(ON):3.5?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES νAvalancheRuggedTechnology νRuggedGateOxideTechnology νLowerInputCapacitance νImprovedGateCharge νExtendedSafeOperatingArea νLowerLeakageCurrent:10μA(Max.)@VDS=-250V νLowerRDS(ON):3.15?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES νAvalancheRuggedTechnology νRuggedGateOxideTechnology νLowerInputCapacitance νImprovedGateCharge νExtendedSafeOperatingArea νLowerLeakageCurrent:10μA(Max.)@VDS=-250V νLowerRDS(ON):3.15?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET FEATURES ?Advancedprocesstechnology ?Fullyavalancherated ?Surface-mount(IRFR9214,SiHFR9214) ?Straightlead(IRFU9214,SiHFU9214) ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES ?Advancedprocesstechnology ?Fullyavalancherated ?Surface-mount(IRFR9214,SiHFR9214) ?Straightlead(IRFU9214,SiHFU9214) ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HIGHVOLTAGEANALOGSWITCH | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
HIGHVOLTAGEANALOGSWITCH | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
RFAMPLIFIER | SPECTRUM Spectrum Instrumentation GmbH | SPECTRUM | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
SiliconNPNepitaxialplanertransistor Fordigitalcircuits ■Features ●Costscanbereducedthroughdownsizingoftheequipmentandreductionofthenumberofparts. ●SS-Minitypepackage,allowingautomaticinsertionthroughtapepackingandmagazinepacking. | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
立锜 |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價(jià) | ||
RICHTEK/立锜 |
22+ |
SOP |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
RICHTEK/立锜 |
2023+ |
SOP |
60 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價(jià) | ||
RICHTEK |
2016+ |
SOP-14 |
6523 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
進(jìn)口原裝 |
23+ |
SOP14 |
1110 |
優(yōu)勢庫存 |
詢價(jià) | ||
RICHTEK |
24+ |
SOP14 |
100 |
詢價(jià) | |||
RICHTEK |
23+ |
SOP14 |
1307 |
原裝環(huán)保房間現(xiàn)貨假一賠十 |
詢價(jià) | ||
RICHTEK |
09+ |
SOP14 |
1307 |
剛到現(xiàn)貨加微13425146986 |
詢價(jià) | ||
RICHTEK/立锜 |
24+ |
MSOP-8 |
10149 |
原裝正品現(xiàn)貨供應(yīng) |
詢價(jià) | ||
RT |
2023+ |
SOP |
80000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) |
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