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TXB0106RGYR

6-BitBidirectionalLevel-ShiftingandVoltageTranslator

TI1Texas Instruments

德州儀器

TXB0106RGYR

6-BITBIDIRECTIONALVOLTAGE-LEVELTRANSLATORWITHAUTO-DIRECTIONSENSINGAND15-kVESDPROTECTION

TITexas Instruments

德州儀器美國德州儀器公司

TXV0106

TXV0106-Q1Automotive6-BitFixDirectionLow-Skew,Low-JitterVoltageTranslatororBuffer

1Features ?Supportsupto500Mbpsfor1.65Vto3.6V ?AEC-Q100qualifiedforautomotiveapplications ?MeetsRGMII2.0timingspecifications: –

TI1Texas Instruments

德州儀器

TXV0106

TXV01066-BitFixDirectionLowSkew,Low-JitterVoltageTranslatororBuffer

1Features ?Supportsupto500Mbpsfor1.65Vto3.6V ?MeetsRGMII2.0timingspecifications: –

TI1Texas Instruments

德州儀器

TXV0106BQBR

TXV01066-BitFixDirectionLowSkew,Low-JitterVoltageTranslatororBuffer

1Features ?Supportsupto500Mbpsfor1.65Vto3.6V ?MeetsRGMII2.0timingspecifications: –

TI1Texas Instruments

德州儀器

TZ0106A

SMD4.0x2.513.0MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage ExcellentAging GoodFrequencyPerturbationandStabilityoverTemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount4.0mmx2.5mmcrystalunitforuseinwirelesstelecommunicationsdevices, especiallyforaneedofultra

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

VN0106

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicongatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputimpedanceandpos

SUTEX

Supertex, Inc

VN0106

N-ChannelEnhancement-ModeVerticalDMOSFET

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN0106ND

N-ChannelEnhancement-Mode

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

VN0106NE

N-ChannelEnhancement-ModeVerticalDMOSPowerFETsQuadArray?

N-ChannelEnhancement-ModeVerticalDMOSPowerFETsQuadArray

SUTEX

Supertex, Inc

晶體管資料

  • 型號:

    RTJ0106

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    50HZ-Thy

  • 性質:

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    0.4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號:

    A-20

  • vtest:

    60

  • htest:

    999900

  • atest:

    0.4

  • wtest:

    0

供應商型號品牌批號封裝庫存備注價格
ELNA
24+
SMD
13580
詢價
Elna
22+
NA
168
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ELNA
15+Rohs
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72800
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23+
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11200
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ELNA
18+
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3580
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10
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3580
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ELNA
5000
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ROHM/羅姆
23+
SOT-23
50000
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ROHM/羅姆
21+
SOT23
13880
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ROHM/羅姆
21+
SOT23
19600
一站式BOM配單
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更多RTJ0106供應商 更新時間2025-4-26 15:30:00