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零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

SEL2014

3phiRoundWideViewingAngleLEDs

3φRoundWideViewingAngleLEDs

SankenSanken electric

三墾三墾電氣株式會社

SER2014

ShieldedPowerInductor??SER2000

COILCRAFTCoilcraft lnc.

線藝美國線藝公司

SFT2014

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: ?BVCBO=250VMIN ?600WattsPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighReliabilityConstruction ?PlanarChipConstructionwithLowLeakageandVeryFastSwitching ?TX,TXV,S-Leve

SSDI

Solid States Devices, Inc

SFT2014

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2014

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

ETCList of Unclassifed Manufacturers

未分類制造商

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30μVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦股份圣邦微電子（北京）股份有限公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AM

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AN

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014M

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SM2014NSKP

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SM2014NSKPC-TRG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SM2014NSU

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SM2014NSUC-TRG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

晶體管資料

  • 型號：

    S2014BH

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    50HZ－Thy

  • 性質(zhì)：

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    200V

  • 最大電流允許值：

    13A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

  • 最大耗散功率：

  • 放大倍數(shù)：

  • 圖片代號：

    B-10

  • vtest：

    200

  • htest：

    999900

  • atest：

    13

  • wtest：

    0

供應(yīng)商型號品牌批號封裝庫存備注價格
MICROSEMI/美高森美
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
24+
N/A
65000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
MW
16+
原廠封裝
3500
原裝現(xiàn)貨假一罰十
 詢價
FERRAZ/羅蘭熔斷器
23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
 詢價
Littlefuse/Teccor
24+
TO-220
50000
詢價
LITTELFUSE
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
TECCOR/Li
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
VISHAY/威世
23+
TO-263
69820
終端可以免費供樣,支持BOM配單!
 詢價
LITTELFUSE/力特
23+
TO-220
10000
公司只做原裝正品
 詢價
LITTELFUSE/力特
TO-220
22+
6000
十年配單,只做原裝
 詢價
更多S2014BH供應(yīng)商 更新時間2024-12-22 14:13:00

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