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20S60FA

20.0AmpereInsulatedDualCommonCathodeSuperFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

20S60FA

20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

AOB20S60

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOB20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOB20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOB20S60L

600V20AaMOSTMPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK20S60

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-247packaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?PFCstages ?Powersupply ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOK20S60L

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOK20S60L

600V20AaMOS

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT20S60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOT20S60L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOT20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF20S60

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF20S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOTF20S60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

AOTF20S60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOTF20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價格
MOSPEC
24+
TO-263
8866
詢價
MOSPEC
23+
TO-
10000
公司只做原裝正品
詢價
mospec
22+
TO-
6000
十年配單,只做原裝
詢價
mospec
22+
TO-
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價
mospec
24+
TO-
35400
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
更多S20S60D供應(yīng)商 更新時間2024-12-25 15:30:00