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S25FL128P0XMFI011中文資料飛索數(shù)據(jù)手冊PDF規(guī)格書

S25FL128P0XMFI011
廠商型號

S25FL128P0XMFI011

功能描述

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

文件大小

2.03526 Mbytes

頁面數(shù)量

48

生產(chǎn)廠商 SPANSION
企業(yè)簡稱

spansion飛索

中文名稱

飛索半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-15 22:59:00

S25FL128P0XMFI011規(guī)格書詳情

General Description

The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.

The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.

Distinctive Characteristics

Architectural Advantages

Single power supply operation

– Full voltage range: 2.7V to 3.6V read and program operations

Memory Architecture

– 128Mb uniform 256 KB sector product

– 128Mb uniform 64 KB sector product

Program

– Page Program (up to 256 bytes) in 1.5 ms (typical)

– Faster program time in Accelerated Programming mode(8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)

Erase

– 2 s typical 256 KB sector erase time

– 0.5 s typical 64 KB sector erase time

– 128 s typical bulk erase time

– Sector erase (SE) command (D8h) for 256 KB sectors; (20h or D8h) for 64KB sectors

– Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for 64KB sectors

Cycling Endurance

– 100,000 cycles per sector typical

Data Retention

– 20 years typical

Device ID

– RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read manufacturer and device ID information

– RES command one-byte electronic signature for backward compatibility

Process Technology

– Manufactured on 0.09 μm MirrorBit? process technology

Package Option

– Industry Standard Pinouts

– 16-pin SO package (300 mils)

– 8-Contact WSON Package (6 x 8 mm)

Performance Characteristics

Speed

– 104 MHz clock rate (maximum)

Power Saving Standby Mode

– Deep Power Down Mode 3 μA (typical)

– Standby Mode 200 μA (max)

Memory Protection Features

Memory Protection

– WP#/ACC pin works in conjunction with Status Register Bits to protect specified memory areas

– 256 KB uniform sector product:

Status Register Block Protection bits (BP2, BP1, BP0) in status

register configure parts of memory as read-only.

– 64KB uniform sector product:

Status Register Block Protection bits (BP3, BP2, BP1, BP0) in

status register configure parts of memory as read-only

Software Features

– SPI Bus Compatible Serial Interface

Hardware Features

x8 Parallel Programming Mode (for 16-pin SO package only)

產(chǎn)品屬性

  • 型號:

    S25FL128P0XMFI011

  • 功能描述:

    閃存 128M CMOS 3V 104MHz Serial NOR 閃存

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 數(shù)據(jù)總線寬度:

    1 bit

  • 存儲類型:

    Flash

  • 存儲容量:

    2 MB

  • 結(jié)構(gòu):

    256 K x 8

  • 接口類型:

    SPI

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流:

    15 mA

  • 工作溫度:

    - 40 C to + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝:

    Reel

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