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S27KS0642GABHM020中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

S27KS0642GABHM020
廠商型號

S27KS0642GABHM020

功能描述

HyperRAM (Self-Refresh DRAM) 3.0 V/1.8 V, 64-Mbit, Automotive-E (Grade 1)

文件大小

1.21758 Mbytes

頁面數(shù)量

53

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-11 23:00:00

S27KS0642GABHM020規(guī)格書詳情

Features

Interface

? HyperBus Interface

? 1.8 V / 3.0 V interface support

- Single-ended clock (CK) - 11 bus signals

- Optional differential clock (CK, CK#) - 12 bus signals

? Chip Select (CS#)

? 8-bit data bus (DQ[7:0])

? Hardware reset (RESET#)

? Bidirectional Read-Write Data Strobe (RWDS)

- Output at the start of all transactions to indicate refresh latency

- Output during read transactions as Read Data Strobe

- Input during write transactions as Write Data Mask

? Optional DDR Center-Aligned Read Strobe (DCARS)

- During read transactions RWDS is offset by a second clock, phase shifted from CK

- The Phase Shifted Clock is used to move the RWDS transition edge within the read data eye

Performance, Power, and Packages

? 200 MHz maximum clock rate

? DDR - transfers data on both edges of the clock

? Data throughput up to 400 MBps (3,200 Mbps)

? Configurable Burst Characteristics

- Linear burst

- Wrapped burst lengths:

? 16 bytes (eight clocks)

? 32 bytes (16 clocks)

? 64 bytes (32 clocks)

? 128 bytes (64 clocks)

- Hybrid option - one wrapped burst followed by linear burst

? Configurable output drive strength

? Power Modes

- Hybrid Sleep Mode

- Deep Power Down

? Array Refresh

- Partial Memory Array(1/8, 1/4, 1/2, and so on)

- Full

? Package

- 24-ball FBGA

? Operating Temperature Range

- Automotive, AEC-Q100 Grade 1: –40 °C to +125 °C

Technology

? 38-nm DRAM

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PG-BGA-24
4957
只在原廠代理處訂貨 假一 賠十 長期供應(yīng)
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23+/24+
24-VBGA
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ST
24+
DIP
175
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SPANSION(飛索)
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FBGA-24(6x8)
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Infineon
2023
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4817
原廠代理渠道,正品保障
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SPANSION(飛索)
2117+
FBGA-24(6x8)
315000
nan一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單
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Infineon
1192
只做正品
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