S29AL004D70BAI010中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

General Description

The S29AL004D is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

Distinctive Characteristics

Architectural Advantages

■ Single power supply operation

— 2.7 to 3.6 volt read and write operations for battery powered applications

■ Manufactured on 200nm process technology

— Compatible with 320nm Am29LV400B and MBM29LV400T/BC

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)

— Supports full chip erase

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple program command sequences

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-power supply Flash

— Superior inadvertent write protection

■ Sector Protection features

— A hardware method of locking a sector to prevent any program or erase operations within that sector

— Sectors can be locked in-system or via programming equipment

— Temporary Sector Unprotect feature allows code changes in previously locked sectors

Performance Characteristics

■ High performance

— Access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— 20 mA program/erase current

■ Cycling Endurance: 1,000,000 cycles per sector typical

■ Data Retention: 20 years typical Package Options

■ 48-ball FBGA

■ 48-pin TSOP

■ 44-pin SO

Software Features

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

Hardware Features

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data