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S29CD016G0MQAN011中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

S29CD016G0MQAN011
廠商型號(hào)

S29CD016G0MQAN011

功能描述

16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory

文件大小

1.60752 Mbytes

頁(yè)面數(shù)量

91 頁(yè)

生產(chǎn)廠商 SPANSION
企業(yè)簡(jiǎn)稱(chēng)

spansion飛索

中文名稱(chēng)

飛索半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-11-17 11:30:00

S29CD016G0MQAN011規(guī)格書(shū)詳情

General Description

The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O? manufactured on 170 nm Process Technology.

Distinctive Characteristics

Architecture Advantages

■ Simultaneous Read/Write operations

— Read data from one bank while executing erase/

program functions in other bank

— Zero latency between read and write operations

— Two bank architecture: large bank/small bank

75/25

■ User-Defined x32 Data Bus

■ Dual Boot Block

— Top and bottom boot sectors in the same device

■ Flexible sector architecture

— CD032G: Eight 2K Double Word, Sixty-two 16K

Double Word, and Eight 2K Double Word sectors

— CD016G: Eight 2K Double Word, Thirty-two 16K

Double Word, and Eight 2K Double Word sectors

■ Secured Silicon Sector (256 Bytes)

— Factory locked and identifiable: 16 bytes for secure,

random factory Electronic Serial Number; Also know

as Electronic Marking

■ Manufactured on 170 nm Process Technology

■ Programmable Burst interface

— Interfaces to any high performance processor

— Linear Burst Read Operation: 2, 4, and 8 double

word linear burst with or without wrap around

■ Program Operation

— Performs synchronous and asynchronous write

operations of burst configuration register settings

independently

■ Single power supply operation

— Optimized for 2.5 to 2.75 volt read, erase, and

program operations

■ Compatibility with JEDEC standards (JC42.4)

— Software compatible with single-power supply Flash

— Backward-compatible with AMD/Fujitsu Am29LV/

MBM29LV and Am29F/MBM29F flash memories

Performance Characteristics

■ High performance read access

— Initial/random access times of 48 ns (32 Mb) and 54

ns (16 Mb)

— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)

■ Ultra low power consumption

— Burst Mode Read: 90 mA @ 75 MHz max

— Program/Erase: 50 mA max

— Standby mode: CMOS: 60 μA max

■ 1 million write cycles per sector typical

■ 20 year data retention typical

■ VersatileI/O? control

— Generates data output voltages and tolerates data

input voltages as determined by the voltage on the

VIO pin

— 1.65 V to 3.60 V compatible I/O signals

Software Features

■ Persistent Sector Protection

— Locks combinations of individual sectors and sector

groups to prevent program or erase operations

within that sector (requires only VCC levels)

■ Password Sector Protection

— Locks combinations of individual sectors and sector

groups to prevent program or erase operations

within that sector using a user-definable 64-bit

password

■ Supports Common Flash Interface (CFI)

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

■ Data# Polling and toggle bits

— Provides a software method of detecting program or

erase operation completion

Hardware Features

■ Program Suspend/Resume & Erase Suspend/

Resume

— Suspends program or erase operations to allow

reading, programming, or erasing in same bank

■ Hardware Reset (RESET#), Ready/Busy# (RY/

BY#), and Write Protect (WP#) inputs

■ ACC input

— Accelerates programming time for higher throughput

during system production

■ Package options

— 80-pin PQFP

— 80-ball Fortified BGA

— Pb-free package option also available

— Known Good Die

產(chǎn)品屬性

  • 型號(hào):

    S29CD016G0MQAN011

  • 制造商:

    SPANSION

  • 制造商全稱(chēng):

    SPANSION

  • 功能描述:

    16 Megabit(512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory

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