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S29GL512P11TFIV10集成電路(IC)的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

S29GL512P11TFIV10
廠商型號(hào)

S29GL512P11TFIV10

參數(shù)屬性

S29GL512P11TFIV10 封裝/外殼為56-TFSOP(0.724",18.40mm 寬);包裝為卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLASH 512MBIT PARALLEL 56TSOP

功能描述

3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

封裝外殼

56-TFSOP(0.724",18.40mm 寬)

文件大小

1.56172 Mbytes

頁(yè)面數(shù)量

71 頁(yè)

生產(chǎn)廠商 SPANSION
企業(yè)簡(jiǎn)稱

spansion飛索

中文名稱

飛索半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-13 0:45:00

S29GL512P11TFIV10規(guī)格書(shū)詳情

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

General Description

The Spansion S29GL01G/512/256/128P are Mirrorbit? Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Single 3V read/program/erase (2.7-3.6 V)

■ Enhanced VersatileI/O? control

– All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC

■ 90 nm MirrorBit process technology

■ 8-word/16-byte page read buffer

■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates

■? Secured Silicon Sector region

– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number

– Can be programmed and locked at the factory or by the customer

■ Uniform 64 Kword/128 Kbyte Sector Architecture

– S29GL01GP: One thousand twenty-four sectors

– S29GL512P: Five hundred twelve sectors

– S29GL256P: Two hundred fifty-six sectors

– S29GL128P: One hundred twenty-eight sectors

■ 100,000 erase cycles per sector typical

■ 20-year data retention typical

■ Offered Packages

– 56-pin TSOP

– 64-ball Fortified BGA

■ Suspend and Resume commands for Program and Erase operations

■ Write operation status bits indicate program and erase operation completion

■ Unlock Bypass Program command to reduce programming time

■ Support for CFI (Common Flash Interface)

■ Persistent and Password methods of Advanced Sector Protection

■ WP#/ACC input

– Accelerates programming time (when VHH is applied) for greater throughput during system production

– Protects first or last sector regardless of sector protection settings

■ Hardware reset input (RESET#) resets device

■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    S29GL512P11TFIV10

  • 制造商:

    Cypress Semiconductor Corp

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 系列:

    GL-P

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    FLASH - NOR

  • 存儲(chǔ)容量:

    512Mb(32M x 16)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁(yè):

    110ns

  • 電壓 - 供電:

    1.65V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    56-TFSOP(0.724",18.40mm 寬)

  • 供應(yīng)商器件封裝:

    56-TSOP

  • 描述:

    IC FLASH 512MBIT PARALLEL 56TSOP

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