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SFH3310

SiliconNPNPhototransistorwithV貫Characteristics

Features ?Especiallysuitableforapplicationsfrom350nmto970nm ?Adaptedtohumaneyesensitivity(Vλ) Applications ?Ambientlightdetector ?Exposuremeterfordaylightandartificiallight ?SensorforBacklight-Dimming ?Forcontrolanddrivecircuits

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

SFH-3310

SiliconNPNPhototransistorwithV貫Characteristics

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

SHJB3310

SURFACEMOUNTTANTALUMCHIPSHJ

DUBILIER

dubilier

SHJB3310

TANTALUMCHIP

DUBILIER

dubilier

SHJD3310

SURFACEMOUNTTANTALUMCHIPSHJ

DUBILIER

dubilier

SHJD3310

TANTALUMCHIP

DUBILIER

dubilier

SID3310

P-ChannelEnhancementModePowerMos.FET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSM3310GH

P-channelEnhancement-modePowerMOSFET

SSC

Silicon Standard Corp.

SSM3310GJ

P-channelEnhancement-modePowerMOSFET

SSC

Silicon Standard Corp.

TL3310

TACTSWITCHESSMT-NORMALLYCLOSED

FEATURES&BENEFITS SMTtact Normallyclosedtactswitch APPLICATIONS/MARKETS Telecommunications ConsumerElectronics Audio/visual Medical Testing/instrumentation Computer/servers/peripherals

E-SWITCH

E-switch

TS3310

ATrue150-nAIQ,0.9-3.6VIN,Selectable1.8-5VOUTInstant-OnTMBoostConverter

DESCRIPTION TheTS3310isalowpowerboostswitchingregulatorwithanindustryleadinglowquiescentcurrentof150nA.The150nAistheactualcurrentconsumedfromthebatterywhiletheoutputisinregulation.TheTS3310’sextremelylowpowerinternalcircuitryconsumes90nAonaverage,with

TOUCHSTONE

Touchstone Technologies，Inc

TS3310

User-enabledSecondaryOutputLoadSwitch

DESCRIPTION TheTS3310isalowpowerboostswitchingregulatorwithanindustryleadinglowquiescentcurrentof150nA.The150nAistheactualcurrentconsumedfromthebatterywhiletheoutputisinregulation.TheTS3310’sextremelylowpowerinternalcircuitryconsumes90nAonaverage,with

SILABS

Silicon Laboratories

UT3310

P-CHANNELENHANCEMENTMODEPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UTR3310

RECTIFIERS

DESCRIPTION Smallsizeandhighsurgecapabilitymakethisseriesofpowerswitchingrectifiersdesirableforpowersupplieswheresize,weightandreliabilityareimportant. FEATURES ●ContinuousRating:to4A ●ControlledAvalanche ●SurgeRating:to100A ●PIV:to600V ●MiniaturePackag

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UTR3310

FASTRECOVERYRECTIFIERS

DIGITRON

Digitron Semiconductors

VBA3310

DualN-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBA3310

N-Channel0-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBE3310

DualN-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VDA3310CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA3310NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
SYNAPRICS
21+
BGA
19000
只做正品原裝現(xiàn)貨
 詢價
BEAU
新
4
全新原裝 貨期兩周
 詢價
/
23+
SOP
12000
一級代理 原裝現(xiàn)貨
 詢價
NA
23+
SOP
23016
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
AMCC
24+
SOP
25
詢價
NEARSON
20+
射頻元件
255
就找我吧!--邀您體驗愉快問購元件!
 詢價
NEARSON
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
NKK Switches
2022+
1
全新原裝 貨期兩周
 詢價
NKK
21+
N/A
2500
進(jìn)口原裝,優(yōu)勢現(xiàn)貨
 詢價
NKK
15
詢價
更多S3310B供應(yīng)商 更新時間2024-11-2 9:03:00

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