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S4D20120A

1200V SIC POWER SCHOTTKY RECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb?FreeDevice AllSMCp

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S4D20120A

包裝：散裝 封裝/外殼：TO-220-2 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY SILICON CARBIDE S

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

ADC4D20120H

1200-VDirectWBGDiode

KeyFeatures: ?SiCperformance ?Easyparalleling ?Highcurrentcarryingcapability ?Verylowjunctioncapacitance ?HighlystableV FandQRRatelevated temperatures

AnalogPower

Analog Power

ADE4D20120D

1200-VDirectWBGDiode

KeyFeatures: ?SiCperformance ?Easyparalleling ?Highcurrentcarryingcapability ?Verylowjunctioncapacitance ?HighlystableV FandQRRatelevated temperatures

AnalogPower

Analog Power

ADE4D20120G

1200-VDirectWBGDiode

KeyFeatures: ?SiCperformance ?Easyparalleling ?Highcurrentcarryingcapability ?Verylowjunctioncapacitance ?HighlystableVFandQRRatelevated temperatures

AnalogPower

Analog Power

C4D20120A

SiliconCarbideSchottkyDiode

Z-REC?RECTIFIERSandZERO-RECOVERY?RECTIFIERS SILICONCARBIDEZ-FET?MOSFET

CreeCree, Inc

科銳

C4D20120A

4thGeneration1200V,20ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D20120D

SiliconCarbideSchottkyDiodeZ-Rec?Rectifier

Features ?1.2-KVoltSchottkyRectifier ?ZeroReverseRecoveryCurrent ?High-FrequencyOperation ?Temperature-IndependentSwitchingBehavior ?PositiveTemperatureCoefficientonVF Benefits ?ReplaceBipolarwithUnipolarRectifiers ?EssentiallyNoSwitchingLosses ?HigherEfficienc

WOLFSPEED

WOLFSPEED, INC.

C4D20120D

SiliconCarbideSchottkyDiode

Z-REC?RECTIFIERSandZERO-RECOVERY?RECTIFIERS SILICONCARBIDEZ-FET?MOSFET

CreeCree, Inc

科銳

C4D20120D

CREESiliconCarbideMOSFETEvaluationKit

Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat

CreeCree, Inc

科銳

C4D20120H

SiliconCarbideSchottkyDiodeZ-RecRectifier

CreeCree, Inc

科銳

C4D20120H

4thGeneration1200V,20ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

E4D20120A

E-SeriesAutomotive4thGeneration1200V,20ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

E4D20120A

SiliconCarbideSchottkyDiodeE-SeriesAutomotive

CreeCree, Inc

科銳

E4D20120D

SiliconCarbideSchottkyDiodeE-SeriesAutomotive

CreeCree, Inc

科銳

E4D20120D

SiliconCarbideSchottkyDiodeE-SeriesAutomotive

Features ?4thGenerationSiCMergedPINSchottkyTechnology ?ZeroReverseRecoveryCurrent ?High-FrequencyOperation ?Temperature-IndependentSwitchingBehavior ?AEC-Q101QualifiedandPPAPCapable ?HumidityResistant Benefits ?ReplaceBipolarwithUnipolarRectifiers ?Essentially

WOLFSPEED

WOLFSPEED, INC.

E4D20120G

SiliconCarbideSchottkyDiodeE-SeriesAutomotive

Features ?4thGenerationSiCMergedPINSchottkyTechnology ?ZeroReverseRecoveryCurrent ?High-FrequencyOperation ?Temperature-IndependentSwitchingBehavior ?AEC-Q101QualifiedandPPAPCapable ?HumidityResistant Benefits ?ReplaceBipolarwithUnipolarRectifiers ?Essentially

WOLFSPEED

WOLFSPEED, INC.

E4D20120G

SiliconCarbideSchottkyDiodeSiliconCarbideSchottkyDiode

CreeCree, Inc

科銳

S4D20120D

1200VSICPOWERSCHOTTKYRECTIFIER

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb?FreeDevice AllSMCp

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S4D20120D-A

1200VSICPOWERSCHOTTKYRECTIFIER

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb?FreeDevice AllSMCp

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    S4D20120A

  • 制造商：

    SMC Diode Solutions

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    散裝

  • 二極管類型：

    碳化硅肖特基

  • 電流 - 平均整流 (Io)：

    20A

  • 速度：

    無恢復(fù)時間 > 500mA（Io）

  • 不同?Vr、F 時電容：

    721pF @ 0V，1MHz

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-2

  • 供應(yīng)商器件封裝：

    TO-220AC（TO-220-2）

  • 工作溫度 - 結(jié)：

    -55°C ~ 175°C

  • 描述：

    DIODE SCHOTTKY SILICON CARBIDE S

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
46000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
SMC Diode Solutions
24+
TO-220AC(TO-220-2)
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
SMC
21+
TO-247AD
25
全新原裝鄙視假貨15118075546
 詢價
JJW/捷捷微
24+
TO-247
5000
原裝現(xiàn)貨
 詢價
TI
24+
QFP
6868
原裝現(xiàn)貨,可開13%稅票
 詢價
TIBB
20+
QFP
500
樣品可出,優(yōu)勢庫存歡迎實單
 詢價
TI/德州儀器
23+
QFP
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
TI
05+
原廠原裝
711
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
24+
3000
自己現(xiàn)貨
 詢價
TEXAS
24+
QFP
5000
十年品牌!原裝現(xiàn)貨!!!
 詢價
更多S4D20120A供應(yīng)商 更新時間2024-12-22 11:06:00

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