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S70GL01GN00FFI022中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
S70GL01GN00FFI022 |
功能描述 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology |
文件大小 |
1.89339 Mbytes |
頁(yè)面數(shù)量 |
83 頁(yè) |
生產(chǎn)廠商 | SPANSION |
企業(yè)簡(jiǎn)稱 |
spansion【飛索】 |
中文名稱 | 飛索半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-10 18:41:00 |
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General Description
The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.
Distinctive Characteristics
Architectural Advantages
■ Two 512 Megabit (S29GL512N) in a single 64-ball Fortified-BGA package
■ Two Chip Enable pins
— Two CE# pins to control selection of each internal
S29GL512N devices
■ Single power supply operation
— 3 volt read, erase, and program operations
■ Manufactured on 110 nm MirrorBit process technology
■ Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
■ Flexible sector architecture
— Each internal S29GL512N device has five
hundred-twelve 64Kword (128Kbyte) sector
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent write
protection
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
Performance Characteristics
■ High performance
— 110 ns (S29GL512N)
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 μA typical standby mode current
■ Package options
— 64-ball Fortified BGA
Software & Hardware Features
■ Software features
— Program Suspend and Resume: read other sectors
before programming operation is completed
— Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
— Data# polling and toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
產(chǎn)品屬性
- 型號(hào):
S70GL01GN00FFI022
- 制造商:
SPANSION
- 制造商全稱:
SPANSION
- 功能描述:
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CYPRESS |
18+ |
N/A |
12 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
2017+ |
NA |
28562 |
只做原裝正品假一賠十! |
詢價(jià) | |||
CYPRESS SEMICONDUCTOR |
兩年內(nèi) |
N/A |
2388 |
原裝現(xiàn)貨,實(shí)單價(jià)格可談 |
詢價(jià) | ||
Infineon Technologies |
23+/24+ |
64-LBGA |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價(jià) | ||
Cypress Semiconductor Corp |
21+ |
78-TFBGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
Cypress |
22+ |
64FBGA (11x13) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
SPANSION |
24+ |
BGA |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
SPANSION |
23+ |
NA |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
SPANSION |
23+ |
BGA64 |
20000 |
原裝正品 歡迎咨詢 |
詢價(jià) | ||
SPANSION |
BGA |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) |