S70GL02GP12FAIV20中文資料飛索數(shù)據(jù)手冊PDF規(guī)格書

General Description

The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Two 1024 Megabit (S29GL01GP) in a single 64-ball FortifiedBGA package (see publication S29GL-P_00 for full specifications)

■ Single 3V read/program/erase (3.0V - 3.6V)

■ 90 nm MirrorBit process technology

■ 8-word/16-byte page read buffer

■ 32-word/64-byte write buffer reduces overall programming time for multiple-word writes

■ Secured Silicon Sector region

– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number

– Can be programmed and locked at the factory or by the customer

■ Uniform 64Kword/128KByte Sector Architecture

– S70GL02GP: two thousand forty-eight sectors

■ 100,000 erase cycles per sector typical

■ 20-year data retention typical

■ Offered Packages

– 64-ball Fortified BGA

■ Suspend and Resume commands for Program and Erase operations

■ Write operation status bits indicate program and erase operation completion

■ Unlock Bypass Program command to reduce programming time

■ Support for CFI (Common Flash Interface)

■ Persistent and Password methods of Advanced Sector Protection

■ WP#/ACC input

– Accelerates programming time (when VACC is applied) for greater throughput during system production

– Protects first or last sector of each die, regardless of sector protection settings

■ Hardware reset input (RESET#) resets device

■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion