S70GL02GS11FHI02X中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

Distinctive characteristics

? CMOS 3.0 V core with Versatile I/O?

? Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full

specifications)

? 65-nm MIRRORBIT? process technology

? Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

? Versatile I/O feature

- Wide I/O voltage (VIO): 1.65 V to VCC

? ×16 data bus

? 16-word/32-byte page read buffer

? 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

? Sector erase

- Uniform 128-KB sectors

- S70GL02GS: two thousand forty-eight sectors

? Suspend and Resume commands for Program and Erase operations

? Status Register, data polling, and Ready/Busy pin methods to determine device status

? Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

? Separate 1024-bye one time program (OTP) array with two lockable regions

- Available in each device Support for common flash interface (CFI)

? WP# input

- Protects first or last sector, or first and last sectors of each device, regardless of sector protection settings

? Temperature range:

- Industrial temperature range (–40°C to +85°C)

- Automotive AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive AEC-Q100 grade 2 (–40°C to +105°C)

? 100,000 erase cycles per sector typical

? 20-year data retention typical

? Packaging options

- 64-ball LSH Fortified BGA, 13 mm ? 11 mm