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SB350EB-G

ESD Leaded Schottky Barrier Rectifiers

Features -Lowdropdownvoltage. -3.0AoperationatTA=75°Cwithnothermalrunaway. -Foruseinlowvoltage,highfrequencyinvertorsfreewheelingandpolarityprotection. -Siliconepitaxialplanarchips. -Lead-freepart,meetRoHSrequirements. -ESDtestunderIEC6100-4-2:Standard

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SB350ET-G

ESDLeadedSchottkyBarrierRectifiers

Features -Lowdropdownvoltage. -3.0AoperationatTA=75°Cwithnothermalrunaway. -Foruseinlowvoltage,highfrequencyinvertorsfreewheelingandpolarityprotection. -Siliconepitaxialplanarchips. -Lead-freepart,meetRoHSrequirements. -ESDtestunderIEC6100-4-2:Standard

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SB350H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to100VoltsCURRENT3.0Amperes FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequencyinverters

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

SB350S

SCHOTTKYBARRIERRECTIFIERDIODES

EIC

EIC discrete Semiconductors

SB350S

SCHOTTKYBARRIERRECTIFIERDIODES

EIC

EIC discrete Semiconductors

SB350S

SchottkyBarrierRectifier

FEATURES ??Verysmallconductionlosses ??Extremelyfastswitching ??Lowforwardvoltagedrop ??Highfrequencyoperation ??20kVESDcapability ??Solderdip275°Cmax.10s,perJESD22-B106 ??ComplianttoRoHSdirective2002/95/ECandin ??accordancetoWEEE2002/96/EC TYPICALA

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SB350S

SchottkyBarrierRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SB350S

SchottkyBarrierRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SB350S

ForHighspeedRectifier

Construction:SchottkyBarrierDiode Application:ForHighspeedRectifier

Good-Ark

GOOD-ARK Electronics

SB350S

SchottkyBarrierRectifier

FEATURES ?Verysmallconductionlosses ?Extremelyfastswitching ?Lowforwardvoltagedrop ?Highfrequencyoperation ?20kVESDcapability ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSdirective2002/95/ECandin accordancetoWEEE2002/96/EC TYPICALAPPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SB350-T

3.0ASCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

SB350-TB

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity ProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

SB350-TB

3.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

SB350T-G

LeadedSchottkyBarrierRectifiers

Voltage:20to100VCurrent:3.0A Features -Lowdropdownvoltage. -Metal-Semiconductorjunctionwithguardring -Highsurgecurrentcapability -Siliconepitaxialplanarchips. -Foruseinlowvoltage,highefficiencyinverters, freewheeling,andpolarityprotectionapplications

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SC-350

Outputvoltagesfrom3.3Vto48V

SLPOWER

SL Power Electronics

SCOCXOHSVT-AV350

SineWaveOutput10to120MHzLowphasenoise

MICROCRYSTAL

MICORO CRYSTAL SWITZERLAND

SCOCXOHSVT-BV350

SineWaveOutput10to120MHzLowphasenoise

MICROCRYSTAL

MICORO CRYSTAL SWITZERLAND

SCOCXOHSVT-CV350

SineWaveOutput10to120MHzLowphasenoise

MICROCRYSTAL

MICORO CRYSTAL SWITZERLAND

SCOCXOHSVT-XV350

SineWaveOutput10to120MHzLowphasenoise

MICROCRYSTAL

MICORO CRYSTAL SWITZERLAND

SCOCXOHSWT-AV350

SineWaveOutput10to120MHzLowphasenoise

MICROCRYSTAL

MICORO CRYSTAL SWITZERLAND

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CJ(江蘇長(zhǎng)電/長(zhǎng)晶)
23+
DO-27
100000
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Anderson Power Products, Inc.
23+
原廠封裝
1269
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EIC
23+
NA
39960
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Vishay General Semiconductor -
24+
DO-204AC(DO-15)
9350
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DIODES/美臺(tái)
1936+
DO201AD
6852
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DIODES
11+P
DO-201AD
1100
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DIODES
1809+
DO-201
3675
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DIODES/美臺(tái)
23+
DO201AD
6000
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DIODES/美臺(tái)
23+
DO-201AD
50000
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DIODES
22+
NA
12080
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更多SB350EB-G供應(yīng)商 更新時(shí)間2024-12-25 15:00:00