首頁(yè) >SBF13007-O>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
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SBF13007-O | High Voltage Fast-Switching NPN Power Transistor GeneralDescription Thisdeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA ◆IsolationVoltage(VISO=4000VAC) | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | |
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdevicesisdesignedforhighvoltage,highspeedswitchingcharacteristicrequiredsuchaslightingsystem,switchingmodepowersupply. Features -VeryHighSwitchingSpeed(Typical60ns@5.0A) -MinimumLot-to-LothFEVariation -LowVCE(sat)(Typical390mV@5.0A/1.0A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdeviceisdesignedforhighvoltage,highspeedswitchingcharacteristicrequiredsuchaslightingsystem,switchingmodepowersupply. Features -VeryHighSwitchingSpeed(Typical60ns@5.0A) -MinimumLot-to-LothFEVariation -LowVCE(sat)(Typical390mV@5.0A/1.0A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆MinimumLot-to-LothFEVariation ◆WideReverseBiasSOA ◆Built-infreewheelingdiode | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdevicesisdesignedforhighvoltage,highspeedswitchingcharacteristic,especiallysuitableforballastsysytem. Features -HighSwitchingSpeed -Shortstorgetime -WideReverseBiasS.O.A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdevicesisdesignedforhighvoltage,highspeedswitchingcharacteristic,especiallysuitableforballastsysytem. Features -HighSwitchingSpeed -Shortstorgetime -WideReverseBiasS.O.A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupplyandinvertersmotorcontrols Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhigh switchingspeedsandhighvoltagecapability.Itusesacellularemitterstructurewithplanar edgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ?DCcurr | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
NPNSiliconTransistor forhighvoltage,high-speedpowerswitchingapplication | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司 | SEMTECH_ELEC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds. ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■ | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■ | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■ | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
NPNPOWERTRANSISTORS | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
SWITCHINGREGULATORAPPLICATIONS SWITCHINGREGULATORAPPLICATIONS Features ?Highspeedswitching ?HighCollectorVoltage:VCBO=700V ?SuitableforSwitchingRegulatorandMotorControl | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI |
詳細(xì)參數(shù)
- 型號(hào):
SBF13007-O
- 制造商:
WINSEMI
- 制造商全稱(chēng):
WINSEMI
- 功能描述:
High Voltage Fast-Switching NPN Power Transistor
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FUJITS/FM |
NA |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢(xún)價(jià) | |||
FUJITSU/富士通 |
02+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
TOSHIBA |
22+ |
CAN5 |
1200 |
原裝現(xiàn)貨熱賣(mài)中,提供一站式真芯服務(wù) |
詢(xún)價(jià) | ||
SHS |
23+ |
TO220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
SHS |
22+ |
TO220F |
10500 |
只有原裝 低價(jià) 實(shí)單必成 |
詢(xún)價(jià) | ||
SHS |
23+ |
TO220F |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢(xún)價(jià) | ||
SHS |
23+ |
NA/ |
4158 |
原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持! |
詢(xún)價(jià) | ||
RN |
新 |
225 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
LITEON |
2017+ |
NA |
28562 |
只做原裝正品假一賠十! |
詢(xún)價(jià) | ||
LT/凌特 |
21+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) |
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