首頁>SBP-3734333538-2F2F-E1-HR>規(guī)格書詳情
SBP-3734333538-2F2F-E1-HR中文資料ERAVANT數(shù)據(jù)手冊(cè)PDF規(guī)格書
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SBP-3734333538-2F2F-E1-HR規(guī)格書詳情
Description: Model SBP-3734333538-2F2F-E1-HR is a GaN power amplifier with a typical small signal gain of 35 dB and a nominal Psat of +38 dBm across the frequency range of 37 to 43 GHz. The DC power requirement for the amplifier is +15VDC/3.7 A. The RF connectors are female 2.4 mm connectors. Other port configurations, such as V connectors and WR-22 waveguides for either the input or output port, are also available under different model numbers.
Features:
? High Output Power
? Good Power and Gain Flatness
Applications:
? 5G System
? Test Equipment
