首頁(yè)>SBP-8138633028-1212-E1>規(guī)格書詳情
SBP-8138633028-1212-E1中文資料ERAVANT數(shù)據(jù)手冊(cè)PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- SBP8100
- SBP735
- SBP745
- SBP760
- SBP750
- SBP-7531141013-1010-E1
- SBP-7531141015-1010-E1
- SBP-7531142213-1010-E1
- SBP-7531142213-1010-E1-2
- SBP-7531142215-1010-E1
- SBP-7531142515-1010-E1
- SBP-7531142515-1F10-E1-WC
- SBP-7531143026-1010-E1
- SBP-7638131512-1212-E1
- SBP-7638131512-1212-S1
- SBP-7638133512-1212-E1
- SBP-7638133512-1212-S1
- SBP-7138633026-1212-E1-HR
SBP-8138633028-1212-E1規(guī)格書詳情
Description:
Model SBP-8138633028-1212-E1 is a power amplifier with a typical small signal gain of 30 dB and a typical P1dB and Psat of +27 and +28 dBm across the frequency range of 81 to 86 GHz, respectively. The DC power requirement for the amplifier is +8 VDC/1,800 mA. The mechanical configuration offers an in line structure with WR-12 waveguides and UG-387/U anti-cocking flanges. Other port configurations, such as with 1 mm connectors or right angle structure with WR-12 waveguides, are also available under different model numbers.
Features:
? High Output Power
? High Gain
? Good Gain Flatness
Applications:
? Radar Systems
? Communication Systems
? Test Equipment
