首頁(yè)>SBP-9039832013-1010-E1>規(guī)格書詳情
SBP-9039832013-1010-E1中文資料ERAVANT數(shù)據(jù)手冊(cè)PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- SBP830
- SBP8100
- SBP850
- SBP880
- SBP820
- SBP840
- SBP860
- SBP-9031441006-0808-E1
- SBP-9031441006-0808-E1
- SBP-7638131512-1212-S1
- SBP-7638133512-1212-E1
- SBP-7638133512-1212-S1
- SBP-9031043015-1010-E1
- SBP-9039531124-1010-S1
- SBP-8531043824-1010-E1
- SBP-8531041024-1010-E1
- SBP-8531041024-1010-E1
- SBP-8531042324-1F1F-S1
SBP-9039832013-1010-E1規(guī)格書詳情
Description:
Model SBP-9039832013-1010-E1 is a GaAs based high power amplifier with a typical small signal gain of 20 dB and a nominal P1dB of +13 dBm across the frequency range of 90 to 98 GHz. The DC power requirement for the amplifier is +8 VDC/225 mA. The mechanical configuration offers an in line structure with WR-10 waveguides and UG-387/U-M anti-cocking flanges. Other port configurations, such as with 1 mm connectors or a right angle structure with WR-10 waveguides, are also available under different model numbers.
Features:
? High Output Power
? High Power Added Efficiency (PAE)
Applications:
? Test Instrumentation
? Communication Systems
? Radar Systems
