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零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SBR13003BD | HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ■VeryHighSwitchingSpeed ■HighVoltageCapability ■WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | |
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA ◆Built-infreewheelingdiode | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
LowNoiseAmplifierforGNSS GENERALDESCRIPTION TheSGM13003Aisalownoiseamplifier(LNA)for GLONASSGalileo,BeidouandGPSapplications.The devicedelivers17.4dBgainatanextremelylownoise figureof1.00dB.Italsofeatureshighgainandexcellent linearityperformancethatoperatesfrom1160MHzto 1300MHz | SGMICROSG Micro Corp 圣邦股份圣邦微電子(北京)股份有限公司 | SGMICRO | ||
NPNTripleDiffusedPlanarSiliconTransistorSwitchingRegulatorApplications NPNTripleDiffusedPlanarSiliconTransistor Features ?Highbreakdownvoltage. ?High-speedswitching. ?WideASO. ?AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forpowerswitchingandelectronrectifierapplications. ??????? ThetransistorissubdividedintoonegroupaccordingtoitsDCcurrentgain. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司 | SEMTECH_ELEC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR ■MEDIUMVOLTAGECAPABILITY ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING ■SWITCHMODEPOWERSUPPLIES DESCRIPTION Thedeviceismanufacturedusinghighvo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■Highvolt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■H | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■H | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitching speedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■Highvol | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
NPNSiliconPowerTransistors Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical. ??????? Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulator’s,Inverters,MotorControls,Solenoid/RelaydriversandDeflection | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司 | SEMTECH_ELEC | ||
NPNPOWERTRANSISTORS | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
NPNPOWERTRANSISTORS | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
NPNSiliconPowerTransistor Features ?Highspeedswitching ?VCEO(sus)=400V ?SuitableforSwitchingRegulatorandMotorControl | AUK AUK corp | AUK | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
NPNSiliconPowerTransistor Features ?Highspeedswitching ?VCEO(sus)=400V ?SuitableforSwitchingRegulatorandMotorControl | AUK AUK corp | AUK | ||
NPNSiliconPowerTransistor Features ?Highspeedswitching ?VCEO(sus)=400V ?SuitableforSwitchingRegulatorandMotorControl Applications ?Poweramplifierapplication ?Highcurrentswitchingapplication | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI |
詳細(xì)參數(shù)
- 型號(hào):
SBR13003BD
- 制造商:
WINSEMI
- 制造商全稱:
WINSEMI
- 功能描述:
HighVoltageFast-SwitchingNPNPowerTransistor
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SEMIWE |
TO-126 |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
SEMIWE |
23+ |
TO-126 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
DIODES |
19+ |
SOD323 |
200000 |
詢價(jià) | |||
DIODES/美臺(tái) |
24+ |
SOD323 |
98000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
DIODES/美臺(tái) |
20+ |
SOD323 |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
DIODES |
2023+ |
SOD323 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
APD |
21+ |
SOD323SC-76USC0805 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
DIODES |
24+ |
SOD323 |
33000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
DIODES |
SOD323 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
DIODES |
2022+ |
SOD323 |
20000 |
只做原裝進(jìn)口現(xiàn)貨.假一罰十 |
詢價(jià) |
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