SC01001518電容器的硅電容器規(guī)格書PDF中文資料

SC01001518屬于電容器的硅電容器。由美國思佳訊公司制造生產(chǎn)的SC01001518硅電容器硅電容器和薄膜電容器是使用半導體器件制造中更常用的工具、方法和材料制造的特殊器件。因此，所提供的極高精度和控制能力可生產(chǎn)出具有卓越參數(shù)穩(wěn)定性且近乎理想的電容器，但參數(shù)值范圍相對有限，并且與最直接的競爭對手陶瓷器件相比，成本要高得多。

Features

? Readily available from stock

? High reliability silicon oxide-nitride dielectric

? Low loss: typically 0.04 dB in a 50 Ω system

? Operation through 26 GHz

? Wide temperature operation

Description

Skyworks Metal Insulator Silicon (MIS) chip capacitors are available in a wide range of sizes and capacitance values. The devices have a dielectric composed of thermally grown silicon dioxide over which a layer of silicon nitride is deposited. This dielectric has a low temperature coefficient of capacitance and very high insulation resistance. The MIS chip capacitors also exhibit excellent long-term stability, which makes them suitable for high-reliability applications. The capacitors have a high dielectric breakdown, which permits the use of thin dielectrics resulting in large capacitance per unit area. The temperature coefficient is less than 50 ppm/°C, allowing the capacitors to operate from –65 °C up to 200 °C. Compared to ceramic capacitors, Skyworks MIS chip capacitors offer higher Q and an insertion loss of 0.04 dB in a 50 Ω system. Insulation resistance is greater than 105 MΩ. To accommodate high volume, automated assembly methods, wafers can be supplied on expanded film frames. To reduce cost, chips can be supplied packaged in vials with sample testing only. Packaging in waffle packs with 100 percent electrical testing and visual inspection is also available.