SCM205K122H1N29-F電容器的薄膜電容器規(guī)格書PDF中文資料

SCM205K122H1N29-F屬于電容器的薄膜電容器。由Cornell Dubilier Electronics制造生產(chǎn)的SCM205K122H1N29-F薄膜電容器薄膜電容器是用于存儲電荷的雙片式器件。這些器件由沉積在基底上并由電介質(zhì)分隔的薄膜層組成。電容值范圍為 0.05 pF 至 500 mF，電壓為 2.5 V 至 100 V，封裝尺寸為 0201 至 1210，容差為 ±0.01 pF 至 ±5％。

Discharge Restrictive De-coupling

The circuit in Figure 1 operates on the same principles as the de-coupling capacitor, but only during turn-off switching. As the IGBT turns off, energy trapped in the loop inductance is transferred to the capacitor. The diode blocks oscillations from occurring and excess charge on the capacitor is discharged through the external resistor.

? 1 or 2 wire taps for connecting external resistor

? Flame resistant case and epoxy, meets UL 94V0

? Other terminal pitches and capacitance values available.

Highlights

? Mount directly to the IGBT module

? Low inductance

? Low Loss

? Hyperfast diodes integrated into package

Applications

Use style SCM as a discharge restrictive de-coupling to

protect dual IGBT modules from overvoltage, Figure

1. Style SCM may also be used as an “N” or “P” type

snubber component for a clamp snubber where single

IGBT modules are used, Figure 2.