SCT027H65G3AG中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	SCT027H65G3AG
功能描述	Automotive-grade silicon carbide Power MOSFET 650 V, 29 m? typ., 60 A in an H2PAK-7 package
絲印標識	27H65G3AG
封裝外殼	H2PAK-7
文件大小	374.48 Kbytes
頁面數(shù)量	14 頁
生產(chǎn)廠商	STMicroelectronics
企業(yè)簡稱	STMICROELECTRONICS【意法半導體】
中文名稱	意法半導體集團官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-1-15 10:28:00

Features

? AEC-Q101 qualified

? Very low RDS(on) over the entire temperature range

? High speed switching performances

? Very fast and robust intrinsic body diode

? Source sensing pin for increased efficiency

Applications

? Main inverter (electric traction)

? DC/DC converter for EV/HEV

? On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.