Features

? AEC-Q101 qualified

? Very low RDS(on) over the entire temperature range

? High speed switching performances

? Very fast and robust intrinsic body diode

? Very high operating junction temperature capability (TJ = 200 °C)

? Source sensing pin for increased efficiency

Applications

? Main inverter (electric traction)

? DC/DC converter for EV/HEV

? On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with low

capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.