首頁>SCT027W65G3-4AG>規(guī)格書詳情
SCT027W65G3-4AG中文資料意法半導體數據手冊PDF規(guī)格書
SCT027W65G3-4AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Very high operating junction temperature capability (TJ = 200 °C)
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with low
capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
22+ |
N/A |
17000 |
原裝正品 香港現貨 |
詢價 | ||
ST/意法 |
24+ |
NA |
860000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
STN |
2405+ |
原廠封裝 |
53931 |
只做原裝優(yōu)勢現貨庫存 渠道可追溯 |
詢價 | ||
24+ |
100 |
詢價 | |||||
ST |
23+ |
QFN |
92200 |
只做原裝進口現貨 |
詢價 | ||
AIM |
23+ |
8215 |
現貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | |||
STMicroelectronics |
23+ |
SMD |
3652 |
原廠正品現貨供應SIC全系列 |
詢價 | ||
ST |
2023 |
NA |
3856 |
原廠代理渠道,正品保障 |
詢價 | ||
MAGNELAB |
25623+ |
con |
7 |
現貨常備產品原裝可到京北通宇商城查價格 |
詢價 | ||
ST |
66243 |
只做正品 |
詢價 |