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SCT10N120AG中文資料意法半導體數據手冊PDF規(guī)格書

SCT10N120AG
廠商型號

SCT10N120AG

功能描述

Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

絲印標識

SCT10N120AG

封裝外殼

HiP247

文件大小

238.62 Kbytes

頁面數量

14

生產廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-2 23:00:00

SCT10N120AG規(guī)格書詳情

Features

? AEC-Q101 qualified

? Very tight variation of on-resistance vs. temperature

? Very high operating temperature capability (TJ = 200 °C)

? Very fast and robust intrinsic body diode

? Low capacitance

Applications

? Motor drives

? EV chargers

? High voltage DC-DC converters

? Switch mode power supplies

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s

housing in the proprietary HiP247 package, allows designers to use an industrystandard

outline with significantly improved thermal capability. These features render

the device perfectly suitable for high-efficiency and high power density applications.

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