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SCT20N120H

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·HighSpeedSwitchingwithLowCapacitances ·EasytoParallelandSimpletoDrive ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageDC/DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SCT20N120H

Marking：SCT20N120；Package：H2PAK-2；Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H2PAK-2 package

Features ?Verytightvariationofon-resistancevs.temperature ?Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) ?Veryfastandrobustintrinsicbodydiode ?Lowcapacitance Applications ?Solarinverters,UPS ?Motordrives ?HighvoltageDC-DCconverters ?Switch

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

20N120C

Generalpurposeinverters

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

BRG20N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

FGA20N120FTD

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA20N120FTDTU

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

Intersil

Intersil Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
H2PAK-2
100000
全新原裝
 詢價(jià)
STMicroelectronics
24+
H2Pak-2
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
STMicroelectronics
23+
H2PAK-3
3652
原廠正品現(xiàn)貨供應(yīng)SIC全系列
 詢價(jià)
ST
2625
只做正品
 詢價(jià)
ROHM/羅姆
23+
TO-220
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
7000
詢價(jià)
ROHM
1726+
TO-220
6528
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!
 詢價(jià)
ROHM
17+
TO220-3
300
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ROHM
SMDDIP
185600
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
更多SCT20N120H供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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