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SD203DC

High-Speed Analog N-Channel Enhancement-Mode DMOS FETS

DESCRIPTION TheSD200seriesismanufacturedutilizingCalogic’sproprietaryDMOSdesignandprocessingtechniques.Thedeviceisdesignedtooperatewellthrough1GHzwhilemaintainingexcellentfrequencyresponse,powergain,andlownoise.TheDMOSstructureisaninherentlylowcapacitancea

Calogic

Calogic, LLC

SD203N

FAST RECOVERY DIODES Stud Version

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0μsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

SD203N

Super Fast Recovery Rectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

SD203N/R04S10

Fast Recovery Diodes (Stud Version), 200 A

FEATURES ?Highpowerfastrecoverydiodeseries ?1.0to2.0μsrecoverytime ?Highvoltageratingsupto2500V ?Highcurrentcapability ?Optimizedturn-onandturn-offcharacteristics ?Lowforwardrecovery ?Fastandsoftreverserecovery ?Compressionbondedencapsulation ?Studv

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SD203N/R08S10

Fast Recovery Diodes (Stud Version), 200 A

FEATURES ?Highpowerfastrecoverydiodeseries ?1.0to2.0μsrecoverytime ?Highvoltageratingsupto2500V ?Highcurrentcapability ?Optimizedturn-onandturn-offcharacteristics ?Lowforwardrecovery ?Fastandsoftreverserecovery ?Compressionbondedencapsulation ?Studv

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SD203N/R10S10

Fast Recovery Diodes (Stud Version), 200 A

FEATURES ?Highpowerfastrecoverydiodeseries ?1.0to2.0μsrecoverytime ?Highvoltageratingsupto2500V ?Highcurrentcapability ?Optimizedturn-onandturn-offcharacteristics ?Lowforwardrecovery ?Fastandsoftreverserecovery ?Compressionbondedencapsulation ?Studv

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SD203N/R12S15

Fast Recovery Diodes (Stud Version), 200 A

FEATURES ?Highpowerfastrecoverydiodeseries ?1.0to2.0μsrecoverytime ?Highvoltageratingsupto2500V ?Highcurrentcapability ?Optimizedturn-onandturn-offcharacteristics ?Lowforwardrecovery ?Fastandsoftreverserecovery ?Compressionbondedencapsulation ?Studv

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SD203N/R14S15

Fast Recovery Diodes (Stud Version), 200 A

FEATURES ?Highpowerfastrecoverydiodeseries ?1.0to2.0μsrecoverytime ?Highvoltageratingsupto2500V ?Highcurrentcapability ?Optimizedturn-onandturn-offcharacteristics ?Lowforwardrecovery ?Fastandsoftreverserecovery ?Compressionbondedencapsulation ?Studv

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SD203N/R16S15

Fast Recovery Diodes (Stud Version), 200 A

FEATURES ?Highpowerfastrecoverydiodeseries ?1.0to2.0μsrecoverytime ?Highvoltageratingsupto2500V ?Highcurrentcapability ?Optimizedturn-onandturn-offcharacteristics ?Lowforwardrecovery ?Fastandsoftreverserecovery ?Compressionbondedencapsulation ?Studv

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SD203N/R20S20

Fast Recovery Diodes (Stud Version), 200 A

FEATURES ?Highpowerfastrecoverydiodeseries ?1.0to2.0μsrecoverytime ?Highvoltageratingsupto2500V ?Highcurrentcapability ?Optimizedturn-onandturn-offcharacteristics ?Lowforwardrecovery ?Fastandsoftreverserecovery ?Compressionbondedencapsulation ?Studv

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

晶體管資料

  • 型號:

    SD2D

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (PA)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    110V

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

  • 最大耗散功率:

    20W

  • 放大倍數(shù):

  • 圖片代號:

    B-90

  • vtest:

    110

  • htest:

    999900

  • atest:

    2

  • wtest:

    20

詳細(xì)參數(shù)

  • 型號:

    SD2

  • 制造商:

    Smarteq Wireless Ab

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