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KSMF32N20C

200V N-Channel MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

CCS-32N20-D

FailsafeSPDTCoaxialSwitch

TELEDYNE

Teledyne Technologies Incorporated

CCS-32N20-M

FailsafeSPDTCoaxialSwitch

TELEDYNE

Teledyne Technologies Incorporated

CCS-32N20-S

FailsafeSPDTCoaxialSwitch

TELEDYNE

Teledyne Technologies Incorporated

CCS-32N20-T

FailsafeSPDTCoaxialSwitch

TELEDYNE

Teledyne Technologies Incorporated

FQA32N20C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=82mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQA32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF32N20C

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.082Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXTA32N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTA32N20T

TrenchTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP32N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTP32N20T

TrenchTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

KSM32N20C

200VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTV32N20E

TMOSPOWERFET32AMPERES200VOLTSRDS(on)=0.075OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesigna

Motorola

Motorola, Inc

MTV32N20E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTW32N20E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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KERSEMI
23+
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10000
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KERSEMI
24+
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12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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KERSEMI
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5000
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KERSEMI
20+
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38900
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50000
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KERSEMI
21+
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10000
原裝現(xiàn)貨假一罰十
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KERSEMI/科盛美
23+
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890
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TO-220F
22+
6000
十年配單,只做原裝
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KERSEMI
23+
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6000
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KERSEMI
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25000
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更多KSMF32N20C供應(yīng)商 更新時(shí)間2024-10-29 14:30:00

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