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SD56120

RF POWER TRANSISTORS RF POWER TRANSISTORS

Description TheSD56120isacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheSD56120isdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemode

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SD56120

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to

ETC1List of Unclassifed Manufacturers

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SD56120

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SD56120

包裝：卷帶（TR） 封裝/外殼：M246 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 860MHZ M246

STMICROELECTRONICSSTMicroelectronics

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SD56120C

Excellent thermal stability

Description TheSD56120CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheSD56120Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsourcem

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SD56120M

RF POWER TRANSISTORS The LdmoST FAMILY

DESCRIPTION TheSD56120MisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheSD56120Misdesignedforhighgainandbroadbandperformanceoperatingincommonsourcem

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SD56120M

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

SD56120_06

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SD56120M

包裝：卷帶（TR） 封裝/外殼：M252 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 860MHZ M252

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SN56120

4-ChannelSpeechController

SONiXSONiX Technology Company

松翰科技

TPS56120X

4.5-Vto17-VInput,1-ASynchronousStep-DownVoltageRegulatorin6-PinSOT-23

TI1Texas Instruments

德州儀器

TSD56120

RFPOWERTransistors,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

XSD56120

RFPOWERTRANSISTORSRFPOWERTRANSISTORS

Description TheSD56120isacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheSD56120isdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemode

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    SD56120

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 包裝：

    卷帶（TR）

  • 晶體管類型：

    LDMOS

  • 頻率：

    860MHz

  • 增益：

    16dB

  • 額定電流（安培）：

    14A

  • 功率 - 輸出：

    100W

  • 封裝/外殼：

    M246

  • 供應(yīng)商器件封裝：

    M246

  • 描述：

    FET RF 65V 860MHZ M246

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
2019+
SMD
6992
原廠渠道 可含稅出貨
 詢價
ST
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
 詢價
ST
23+
高頻管
650
專營高頻管模塊,全新原裝!
 詢價
ST
24+
M246
195
詢價
STMicro.
23+
M246
7750
全新原裝優(yōu)勢
 詢價
ST
24+
TO-62s
90000
一級代理商進(jìn)口原裝現(xiàn)貨、假一罰十價格合理
 詢價
ST
24+
186
現(xiàn)貨供應(yīng)
 詢價
ST
20+
高頻管
29516
高頻管全新原裝主營-可開原型號增稅票
 詢價
ST
24+
高頻管
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
ST/意法
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
更多SD56120供應(yīng)商 更新時間2025-1-10 16:03:00

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