SD8250中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
SD8250規(guī)格書詳情
DESCRIPTION
The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The SD8250 is supplied in the AMPAC? Hermetic Metal/Ceramic package with internal Input/Output matching structures.
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 250 W MIN. WITH 8.0 dB GAIN
產(chǎn)品屬性
- 型號：
SD8250
- 制造商：
ASI
- 制造商全稱：
ASI
- 功能描述：
NPN SILICON RF POWER TRANSISTOR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
原廠原封 |
16900 |
原裝，請咨詢 |
詢價 | ||
ST |
24+ |
278 |
現(xiàn)貨供應(yīng) |
詢價 | |||
ST/意法 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
ST |
23+ |
原廠原封 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST |
25+ |
原廠原封 |
18000 |
全新原裝 |
詢價 | ||
SD |
24+ |
DIP18 |
538 |
詢價 | |||
SANKOSHA |
23+ |
DIP |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
ST |
21+ |
原廠原封 |
23480 |
詢價 | |||
ST |
23+ |
1688 |
房間現(xiàn)貨庫存:QQ:373621633 |
詢價 |
