零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ShieldHighPowerInductor ?Lowleakagefluxtotheoutsidebycompleteclosedmagneticcircuit structure. ?CorrespondtolargesaturationcurrentbyhighBmNi-Znferritecore. | TCETokyo Coil Engineering Co., LTD.. 東京線圈工程東京線圈工程株式會社 | TCE | ||
SMTPowerInductor | deltaDelta Electronics, Inc. 臺達電子工業(yè)股份有限公司 | delta | ||
ShieldedPowerInductors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
ThyristorDiscretes(SCRs) | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER | ||
DiscreteThyristors(SCRs) | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER | ||
17A,55VN/P-CHANNELMOSFET GENERALDESCRIPTION SVD1055SAisacombinationdevicepackagedwithanN-channelanda P-channelenhancementmodeMOSFET,whichisproducedusingSilan proprietarylow-voltageplanarVDMOSprocess.Theimprovedprocess andcellstructurehavebeenespeciallytailoredtominimizeon-state res | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
17A,55VN/P-CHANNELMOSFET GENERALDESCRIPTION SVD1055SAisacombinationdevicepackagedwithanN-channelanda P-channelenhancementmodeMOSFET,whichisproducedusingSilan proprietarylow-voltageplanarVDMOSprocess.Theimprovedprocess andcellstructurehavebeenespeciallytailoredtominimizeon-state res | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
BASE/GATEDRIVERTRANSFORMER | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
50mA,100mAand150mACMOSLDOswithShutdownandERROROutput | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
50mA,100mAand150mACMOSLDOswithShutdownandERROROutput | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
50mA,100mAand150mACMOSLDOswithShutdownandERROROutput GENERALDESCRIPTION TheTC1054isahighaccuracy(typically±0.5)CMOSupgradeforolder(bipolar)lowdropoutregulators.Designedspecificallyforbattery-operatedsystems,theTC1054’sCMOSconstructioneliminateswastedgroundcurrent,significantlyextendingbatterylife.Totalsupplycur | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
KaBand2WattPowerAmplifier KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?20dBNominalGain ?2WNominalPout ?-30dBcIMR3@26dBmSCL ?Bias7V@1.4A ?ChipDimensions5.89mmx3.66mm PrimaryApplications ?LMDS ?Point-to-PointRadio ?SatelliteGroundTerminal Rel | TriQuint TriQuint Semiconductor | TriQuint | ||
KaBand2WattPowerAmplifier KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?20dBNominalGain ?2WNominalPout ?-30dBcIMR3@26dBmSCL ?Bias7V@1.4A ?ChipDimensions5.89mmx3.66mm PrimaryApplications ?LMDS ?Point-to-PointRadio ?SatelliteGroundTerminal Rel | TriQuint TriQuint Semiconductor | TriQuint | ||
ThroughHolePowerInductors | deltaDelta Electronics, Inc. 臺達電子工業(yè)股份有限公司 | delta | ||
Enhancedfault-tolerantCANtransceiver Generaldescription TheTJA1055istheinterfacebetweentheprotocolcontrollerandthephysicalbuswiresinaControllerAreaNetwork(CAN).Itisprimarilyintendedforlow-speedapplicationsupto125kBdinpassengercars.Thedeviceprovidesdifferentialreceiveandtransmitcapabilityb | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
Enhancedfault-tolerantCANtransceiver Generaldescription TheTJA1055istheinterfacebetweentheprotocolcontrollerandthephysicalbuswiresinaControllerAreaNetwork(CAN).Itisprimarilyintendedforlow-speedapplicationsupto125kBdinpassengercars.Thedeviceprovidesdifferentialreceiveandtransmitcapabilityb | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
ToshibaIntelligentPowerDeviceSiliconMonolithicPowerMOSIntegratedCircuit ForMotor,SolenoidandLamp Highsidepowerswitch TPD1055FAisaHigh-sideswitchofaPchannelDMOS output.ItismonolithicpowerICthatcanbedrivendirectly fromaCMOSorTTLlogiccircuit(MPUetc.),andwas equippedwiththeintelligentfunctionofprotectionand diagnosis. | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
OFF-LINESWITCHMODETRANSFORMERS GENERALAPPLICATIONINFORMATION PremierMagneticsOff-LineSwitchModeTransformershavebeendesignedforusewithPowerIntegrations,Inc.TOPXXXseriesofoff-linePWMswitchingregulatorsintheFlybackBuck-Boostcircuitconfiguration.Thisconversiontopologycanprovideisolatedmultipleo | PMI Premier Magnetics, Inc. | PMI | ||
SMD2.5x2.016.0MHzCrystalUnit Features: SurfaceMountSeamWeldPackage ExcellentReliabilityPerformance UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseincommunicationsdevices,especiallyfora needofultraminiaturepackageformobility. | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
USBReceptacle-AType,HorizontalSMTTop-MidMount,3.48mmOffset,PlasticPeg&ShellStakes | GCT Global Connector Technology | GCT |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產廠家:
- 制作材料:
Si-NPN
- 性質:
功率開關 (PSW)
- 封裝形式:
直插封裝
- 極限工作電壓:
200V
- 最大電流允許值:
10A
- 最大工作頻率:
<1MHZ或未知
- 引腳數:
2
- 可代換的型號:
3DK208D,
- 最大耗散功率:
100W
- 放大倍數:
β=10-50
- 圖片代號:
E-44
- vtest:
200
- htest:
999900
- atest:
10
- wtest:
100
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
DIODES/美臺 |
23+ |
TO-220 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
DIODES/美臺 |
23+ |
NA/ |
3290 |
原廠直銷,現貨供應,賬期支持! |
詢價 | ||
DiodesZetex |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
DIODES/美臺 |
1936+ |
TO220AB |
6852 |
只做原裝正品現貨或訂貨!假一賠十! |
詢價 | ||
DIODES |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
DIODES |
23+ |
TO-220 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
DIODES |
22+ |
NA |
6 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
DIODES |
17+ |
TO-220 |
1290 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
DiodesZetex |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
DIODES |
2405+ |
原廠封裝 |
12500 |
15年芯片行業(yè)經驗/只供原裝正品:0755-83267371鄒小姐 |
詢價 |
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