SFH617A_V02中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The 110 °C rated SFH617A (DIP) feature a high current

transfer ratio, low coupling capacitance and high isolation

voltage. These couplers have a GaAs infrared diode emitter,

which is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-4 package.

The coupling devices are designed for signal transmission

between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm spacing.

Creepage and clearance distances of > 8.0 mm are

achieved with option 6.

FEATURES

? Operating temperature from -55 °C to +110 °C

? Good CTR linearity depending on forward current

? Isolation test voltage, 5300 VRMS

? High collector emitter voltage, VCEO = 70 V

? Low saturation voltage

? Fast switching times

? Low CTR degradation

? Temperature stable

? Low coupling capacitance

? End stackable, 0.100 (2.54 mm) spacing

? High common mode interference immunity

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912