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SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30μVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦股份圣邦微電子(北京)股份有限公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AM

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AN

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014M

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SM2014NSKP

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SM2014NSKPC-TRG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SM2014NSU

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

詳細參數(shù)

  • 型號:

    SG2014J

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    TRANS DARLINGTON NPN 50V 0.6A 16CDIP - Bulk

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更多SG2014J供應(yīng)商 更新時間2025-2-9 9:30:00