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13N60

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies.DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications.TheNell13N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof13A,fastswitch

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

13N60E

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FCP13N60N

N-ChannelMOSFET600V,13A,0.258廓

Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCP13N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCPF13N60NT

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCPF13N60NT

N-ChannelMOSFET600V,13A,0.258廓

Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FMC13N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMC13N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMC13N60ES

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMC13N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

詳細參數(shù)

  • 型號:

    SGI13N60UFTU

  • 功能描述:

    IGBT 晶體管

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
24+
N/A
1000
詢價
MON
20+
BGA
35830
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
Other
24+
原廠原封
58000
絕對原裝現(xiàn)貨代理銷售
詢價
SUN
23+
BGA
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
FAIRCHILD/仙童
2021+
TO263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
N/A
2020+
SOP8
2000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
SG
23+
DIP8
5000
原裝正品,假一罰十
詢價
ST
23+
TO-3PF
16900
正規(guī)渠道,只有原裝!
詢價
ST
TO-3PF
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ST
22+
TO-3PF
16900
支持樣品 原裝現(xiàn)貨 提供技術支持!
詢價
更多SGI13N60UFTU供應商 更新時間2025-2-5 16:00:00