SGM33685C中文資料圣邦股份數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The SGM33685C is a power amplifier (PA) which can

support 350MHz to 400MHz, 450MHz to 460MHz and

470MHz to 510MHz. The device uses advanced

InGaP/GaAs HBT (heterojunction bipolar transistor)

process, so it features high linearity, high efficiency and

high ruggedness.

The SGM33685C is available in a Green TQFN-3×3-16L

package.

FEATURES

● Supply Voltage: 3.3V and 5V

● Signal Gain at 5V:

34dB at 350MHz to 400MHz

37dB at 450MHz to 460MHz

36dB at 470MHz to 510MHz

● Signal Gain at 3.3V:

33dB at 350MHz to 400MHz

37dB at 450MHz to 460MHz

35dB at 470MHz to 510MHz

● P1dB Output Power at 5V:

31.5dBm at 350MHz to 400MHz

33dBm at 450MHz to 460MHz

32dBm at 470MHz to 510MHz

● P1dB Output Power at 3.3V:

29.0dBm at 350MHz to 400MHz

30.5dBm at 450MHz to 460MHz

28.5dBm at 470MHz to 510MHz

● On-Chip 50Ω Matching for Input Port

● Available in a Green TQFN-3×3-16L Package

APPLICATIONS

Repeater

ISM Band PA

LTE Femtocell