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首頁 >SGSD210>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
SHB210	文件：153.04 Kbytes Page：1 Pages	2DDR2-533/665SODIMMsupportupto4GB	AXIOMTEKAxiomtek Co., Ltd. 艾訊科技艾訊股份有限公司	AXIOMTEK
SHB210VG	文件：284.39 Kbytes Page：1 Pages	2DDR2-533/665SO-DIMMsupportupto4GB	AXIOMTEKAxiomtek Co., Ltd. 艾訊科技艾訊股份有限公司	AXIOMTEK
SHB210VGG	文件：284.39 Kbytes Page：1 Pages	2DDR2-533/665SO-DIMMsupportupto4GB	AXIOMTEKAxiomtek Co., Ltd. 艾訊科技艾訊股份有限公司	AXIOMTEK
SIHFD210	文件：1.6013 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFL210	文件：1.06848 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFL210	文件：171.96 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFL210T	文件：1.06848 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR210	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR210	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR210	文件：834.32 Kbytes Page：11 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR210,SiHFR210) ?Straightlead(IRFU210,SiHFU210) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR210T	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR210TA	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR210TL	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR210TLA	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR210TR	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR210TRA	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU210	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFU210	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU210	文件：834.32 Kbytes Page：11 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR210,SiHFR210) ?Straightlead(IRFU210,SiHFU210) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SK210	文件：173.73 Kbytes Page：2 Pages	SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER FEATURES PlasticPackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 Forsurfacemountapplications Forsurfacemountedapplications Built-instrainrelief Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency High	TRSYS Transys Electronics	TRSYS

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晶體管資料

型號(hào)：
SGSD210
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-P+Darl
性質(zhì)：
功率放大（L）_開關(guān)管（S）
封裝形式：
直插封裝
極限工作電壓：
80V
最大電流允許值：
25A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
3
可代換的型號(hào)：
最大耗散功率：
130W
放大倍數(shù)：
β>15
圖片代號(hào)：
B-70
vtest：
80
htest：
999900
atest：
25
wtest：
130

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市賽特興科技有限公司	SGSD300	ST	23+	TO220ABNONISOL	16900	正規(guī)渠道,只有原裝!	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	SGSD300	ST		TO220ABNONISOL	36900	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市星佑電子有限公司	SGSD300	ST	22+	TO220ABNONISOL	16900	支持樣品原裝現(xiàn)貨提供技術(shù)支持!	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	SGSD310	FAIRCHILD/仙童	23+	TO	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	SGSD310	FAIRCHILD/仙童	TO	22+	6000	十年配單,只做原裝	詢價(jià)
深圳市躍創(chuàng)芯科技有限公司	SGSD310	FAIRCHILD/仙童	22+	TO	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	SGSD310	FAIRCHILD/仙童	22+	TO	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市宏捷佳電子科技有限公司	SGSD310	仙童	24+	TO	12300	獨(dú)立分銷商公司只做原裝誠心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市一線半導(dǎo)體有限公司	SGSD311		24+		8866		詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	SGSD311	ST/意法	23+	TO-218	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢價(jià)

更多SGSD210供應(yīng)商更新時(shí)間2025-1-11 16:00:00

晶體管資料

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