SI3865DDV_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Low RDS(on) TrenchFET?: 1.5 V rated

? 1.5 V to 12 V input

? 1.8 V to 8 V logic level control

? Low profile, small footprint TSOP-6 package

? 2100 V ESD protection on input switch, VON/OFF

? Adjustable slew-rate

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

? Load switch with level-shift gate drive

? Slew-rate control

? Portable / consumer devices

DESCRIPTION

The Si3865DDV includes a p- and n-channel MOSFET in a

single TSOP-6 package. The low on-resistance p-channel

TrenchFET is tailored for use as a load switch. The

n-channel, with an external resistor, can be used as a

level-shift to drive the p-channel load-switch. The n-channel

MOSFET has internal ESD protection and can be driven

by logic signals as low as 1.8 V. The Si3865DDV operates

on supply lines from 1.5 V to 12 V, and can drive loads up

to 2.8 A.