首頁>SI4410DYPBF>規(guī)格書詳情
SI4410DYPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
SI4410DYPBF規(guī)格書詳情
Description
This N-channel HEXFET? Power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications.
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
● N-Channel MOSFET
● Low On-Resistance
● Low Gate Charge
● Surface Mount
● Logic Level Drive
● Lead-Free
產(chǎn)品屬性
- 型號:
SI4410DYPBF
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR(國際整流器) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
IR |
SOP-8 |
699839 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
IR |
24+ |
58900 |
詢價 | ||||
INFINEON |
1651+ |
? |
7500 |
只做原裝進口,假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
INFINEON |
23+ |
SOP-8 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
IR |
22+ |
SOP-8 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
Infineon Technologies |
2022+ |
8-SOIC(0.154 |
38550 |
詢價 | |||
IR |
22+ |
8-SO |
25000 |
只有原裝絕對原裝,支持BOM配單! |
詢價 |