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SI4730EY中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

SI4730EY
廠商型號(hào)

SI4730EY

功能描述

Current-Sensing Power MOSFETs

文件大小

68.92 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-12 19:25:00

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SI4730EY規(guī)格書(shū)詳情

INTRODUCTION

Vishay Siliconix current-sensing power MOSFETs offer a simple means of incorporating a protection feature into an electronic control circuit and avoiding catastrophic failures resulting from overcurrent (overload) and/or short-circuit conditions. The device package is a modified D2

PAK with five pins. The MOSFET termination retains the standard D2PAK footprint for a three-pin device. The additional two pins provide termination for a current-sense output and an internal Kelvin connection to the source. For current sensing, the MOSFET design employs a small number of the total number of MOSFET cells in a known ratio. The latter define the current-sense parameters. A typical control interface uses a simple circuit with an op-amp or a comparator. This approach offers the freedom of control-level setting and facilitates its incorporation into the main control system.

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產(chǎn)品屬性

  • 型號(hào):

    SI4730EY

  • 功能描述:

    MOSFET 30V 11.7A 3.6W

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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