訂購數(shù)量 | 價(jià)格 |
---|---|
1+ |
首頁>SI5936DU-T1-GE3>芯片詳情
SI5936DU-T1-GE3_VISHAY/威世科技_MOSFET 30V 6.0A 10.4W 30mOhm @ 10V賽能新源
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SI5936DU-T1-GE3
- 功能描述:
MOSFET 30V 6.0A 10.4W 30mOhm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市賽能新源半導(dǎo)體有限公司
- 商鋪:
- 聯(lián)系人:
朱樺
- 手機(jī):
13510673492
- 詢價(jià):
- 電話:
13510673492
- 地址:
福田區(qū)華強(qiáng)北街道華航社區(qū)振興路華康大院2棟518
相近型號
- SI5938DU-T1-GE3
- SI5935DCT1E3
- SI5943DUT1E3
- SI5935DC-T1
- SI5943DU-T1-E3
- SI5935DC
- SI5943DUT1GE3
- SI5943DU-T1-GE3
- SI5935CDC-TI-GE3
- SI5944DUT1E3
- SI5935CDC-T1-GE3
- SI5944DU-T1-E3
- SI5935CDCT1GE3
- SI5944DUT1GE3
- SI5935CDC-T1-E3
- SI5944DU-T1-GE3
- SI5935CDCT1E3
- SI5945DU-T1-E3
- SI5935CDC
- SI5947DU0T10GE3
- SI5933DL-T1
- SI5947DUT1E3
- SI5933DL
- SI5947DU-T1-E3
- SI5947DUT1GE3
- SI5933DC-TI-E3
- SI5947DU-T1-GE3
- SI5933DC-T3
- SI5948DUT1GE3
- SI5948DU-T1-GE3
- SI5933DC-T1-GE3
- SI5975DC
- SI5933DCT1GE3
- SI5975DCT1
- SI5975DC-T1
- SI5933DC-T1-E3
- SI5975DCT1E3
- SI5933DCT1E3
- SI5975DC-T1-E3
- SI5975DC-T1-E3IC
- SI5933DC-T1
- SI5975DCT1GE3
- SI5933DC1-E3
- SI5975DC-T1-GE3
- SI5933DC
- SI5980DUT1GE3
- SI5933CDC-T1-GE3
- SI5980DU-T1-GE3
- SI5933CDCT1GE3
- SI598FAA000112DG