SI6924AEDQ中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FEATURES

? Halogen-free

? Low RDS(on)

? VGS Max Rating: 14 V

? Exceeds 2 kV ESD Protection

? 28 V VDS Rated

? Symmetrical Voltage Blocking (Off Voltage)

DESCRIPTION

The Si6924AEDQ is a dual N-Channel MOSFET with ESD

protection and gate over-voltage protection circuitry

incorporated into the MOSFET. The device is designed for

use in Lithium Ion battery pack circuits. The common-drain

construction takes advantage of the typical battery pack

topology, allowing a further reduction of the device’s onresistance.

The 2-stage input protection circuit is a unique

design, consisting of two stages of back-to-back zener

diodes separated by a resistor. The first stage diode is

designed to absorb most of the ESD energy. The second

stage diode is designed to protect the gate from any

remaining ESD energy and over-voltages above the gates

inherent safe operating range. The series resistor used to

limit the current through the second stage diode during over

voltage conditions has a maximum value which limits the

input current to ≤ 10 mA at 14 V and the maximum toff to 12

μs. The Si6924AEDQ has been optimized as a battery or

load switch in Lithium Ion applications with the advantage of

both a 2.5 V RDS(on) rating and a safe 14 V gate-to-source

maximum rating.