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首頁>SI7460DP-T1-E3>詳情
SI7460DP-T1-E3_VISHAY/威世科技_MOSFET 60V 18A 5.4W 9.6mohm @ 10V千層芯半導(dǎo)體
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SI7460DP-T1-E3
- 功能描述:
MOSFET 60V 18A 5.4W 9.6mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
千層芯半導(dǎo)體(深圳)有限公司
- 商鋪:
- 聯(lián)系人:
羅先生,張先生,吳小姐
- 手機(jī):
13760152475
- 詢價(jià):
- 電話:
0755-83978748/23611964
- 傳真:
0755-23611964
- 地址:
深圳市福田區(qū)華強(qiáng)北街道華航社區(qū)振興路109號(hào)華康大院2棟2層216-1
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