訂購數(shù)量 | 價格 |
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1+ |
首頁>SI7772DP-T1-GE3>芯片詳情
SI7772DP-T1-GE3_VISHAY/威世科技_MOSFET 30V 35.6A 29.8W 13mohm @ 10V博通航睿技術
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SI7772DP-T1-GE3
- 功能描述:
MOSFET 30V 35.6A 29.8W 13mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商
- 企業(yè):
天津市博通航睿技術有限公司
- 商鋪:
- 聯(lián)系人:
馬總
- 手機:
18322198211
- 詢價:
- 電話:
18322198211
- 地址:
天津市南開區(qū)科研西路12號356室
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