訂購(gòu)數(shù)量 | 價(jià)格 |
---|---|
1+ |
SI8425DB-T1-E1_VISHAY/威世科技_MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III粵駿騰二部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SI8425DB-T1-E1
- 功能描述:
MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市粵駿騰電子科技有限公司
- 商鋪:
- 聯(lián)系人:
蔡蔡
- 手機(jī):
13530559292
- 詢價(jià):
- 電話:
0755-82532966/82530833/13530559292
- 地址:
深圳市福田區(qū)華強(qiáng)北路賽格廣場(chǎng)6609室
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