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SLD1132VS

635nmRedLaserDiode

Description TheSLD1132VSisaredlaserdiodedesignedforlaserpointers.Itswavelength(635nmtyp.)isshortenedby35nmandvisibilityisincreasedbyapproximately7times,comparedtotheconventionalvisiblelaserdiode(670nmtyp.). Features ?Shortwavelength(635nmtyp.) ?Smallpac

SonySony Corporation

索尼

SMV1132A-LF

Voltage-ControlledOscillator

ZCOMM

Z-Communications, Inc

SMV1132A-LF

Voltage-ControlledOscillatorSurfaceMountModule

ZCOMM

Z-Communications, Inc

STB1132

PNPSiliconTransistor

Description ?Mediumpoweramplifier Features ?PC(Collectordissipation)=2W(Ceramicsubstateof40×40×0.8mmused) ?Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) ?ComplementarypairwithSTD1664

AUK

AUK corp

STB1132

PNPSiliconTransistor

Description ?Mediumpoweramplifier Features ?PC(Collectorpowerdissipation) =1W(Ceramicsubstateof250?×0.8tused) ?Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) ?ComplementarypairwithSTD1664

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

STB1132

PNPSiliconTransistor

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

TA1132A

SAWFilter881.5MHz

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TB1132A

47.25MHz6.2MHzBW13.8x4.6mmPlasticDIPSAWIFFilter

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TSB1132

LowVcesatPNPTransistor

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSB1132

LowFrequencyPNPTransistor

Features ●LowVCE(SAT)-0.15@IC/IB=--.5A/-50mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
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22+
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23+/24+
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8600
只供原裝進口公司現(xiàn)貨+可訂貨
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29408
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64000
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2010+
N/A
990
加我qq或微信，了解更多詳細信息,體驗一站式購物
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20+
SOP-16
968
就找我吧!--邀您體驗愉快問購元件!
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POWER
23+
IGBT
50000
全新原裝正品現(xiàn)貨,支持訂貨
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更多SID1132KQ供應商 更新時間2025-3-12 18:26:00

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