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SIHA125N60EF

EF Series Power MOSFET With Fast Body Diode

FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

FCH125N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=29A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=125mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FCH125N60E

Telecom/SeverPowerSupplies

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP125N60E

Telecom/SeverPowerSupplies

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP125N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PJMP125N60FRC

600VN-ChannelSuperJunctionMOSFET

Feature: ?RDS(ON)Max,VGS@10V:125mΩ ?FastrecoveryQrr/Trrperformance ?HighSpeedSwitchingandLowRDS(ON) ?100AvalancheTested ?100RgTested ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

SIHB125N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG125N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH125N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHK125N60E

ESeriesPowerMOSFET

FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHK125N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP125N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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